Silicon Carbide (SiC) MOSFETs | NTHL022N120M3S

Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-3L

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概览

The new family of 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive. 

  • Industrial
  • UPS / ESS
  • Solar
  • EV Charger
  • Excellent FOM [ = Rdson * Eoss ]
  • Ultra Low Gate Charge (QG(tot) = 137 nC)
  • High Speed Switching with Low Capacitance (Coss = 146 pF)
  • 15V to 18V Gate Drive
  • New M3S technology: 22 mohm RDS(ON) with low Eon and Eoff losses
  • 100% Avalanche Tested
  • Halide Free and RoHS Compliant

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参考价格

NTHL022N120M3S

联系销售

量产中

CAD Model

Pb

A

H

P

TO-247-3LD

340CX

NA

0

TUBE

450

No

M3S

1200

89

22

137

146

175

$11.5065

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可靠性数据

Die Related Summary Data

Device: NTHL022N120M3S

Equivalent to wafer fab process: SIC

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SIC

0

32191536553

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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