Silicon Carbide MOSFET, N‐Channel, 650V, 12 mΩ, D2PAK−7L

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Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • Automotive DC/DC
  • Automotive PFC
  • Automotive On Board Charger
  • Automotive DC/DC converter for EV/PHEV
  • Qualified for Automotive According to AEC−Q101
  • 650V rated
  • Max RDS(on) = 18 mΩ at Vgs = 18V, Id = 75A
  • High Speed Switching and Low Capacitance
  • 100% UIL Tested
  • Devices are RoHS Compliant

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NVBG015N065SC1

Active

Pb

A

H

P

D2PAK7 (TO-263-7L HV)

1

260

REEL

800

Y

M2

650

145

12

283

424

175

$35.0893

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