NVH4L015N065SC1: Silicon Carbide MOSFET, N‐Channel, 650V, 12 mΩ, TO247−4L

Datasheet: MOSFET - SiC Power, Single N-Channel, TO247-4, 650 V, 12 mOhm, 142 A
Rev. 3 (220kB)
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Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特性   优势
     
  • Qualified for Automotive According to AEC−Q101
 
  • Automotive grade
  • 650V rated
   
  • Max RDS(on) = 18 mΩ at Vgs = 18V, Id = 75A
   
  • High Speed Switching and Low Capacitance
   
  • 100% UIL Tested
   
  • Devices are RoHS Compliant
   
应用   终端产品
  • Automotive DC/DC and PFC
  • Automotive Traction Inverter
 
  • Automotive On Board Charger
  • Automotive Traction Inverter
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仿真模型 (3) 封装图纸 (1)
数据表 (1)  
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Specifications
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状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
NVH4L015N065SC1 Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
NVH4L015N065SC1 TO-247-4 340CJ 1 260 Tube 450 $15.9283
市场订货至交货的时间(周) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (C)
Output Capacitance (C)
Tj Max (°C)
Package Type
NVH4L015N065SC1  
 $15.9283 
Pb
A
H
P
 Active   
N-Channel
Single
650
142
12
283
424
175
TO-247-4
外形
340CJ   
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