NVHL020N090SC1: Silicon Carbide MOSFET, N‐Channel, 900 V, 20 mΩ, TO247−3L

Datasheet: Silicon Carbide (SiC) MOSFET – 20 mohm, 900 V, M2, TO-247-3L
Rev. 3 (262kB)
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Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特性   优势
     
  • Qualified for Automotive According to AEC−Q101
 
  • Automotive Grade
  • 900V rated
   
  • Max RDS(on) = 28 mΩ at Vgs = 15V, Id = 60A
   
  • High Speed Switching and Low Capacitance
   
  • 100% UIL Tested
   
  • Devices are RoHS Compliant
   
应用   终端产品
  • Automotive PFC
  • Automotive DC/DC
 
  • Automotive DC/DC converter for EV/PHEV
  • Automotive On Board Charger
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产品 状况 Compliance 简短说明
SEC-6D6KW-OBC-SIC-GEVB Active
Pb-free
6.6kW OBC SiC model
Availability & Samples
Specifications
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
NVHL020N090SC1 Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
NVHL020N090SC1, Silicon Carbide MOSFET, N?Channel, 900 V, 20 m?, TO247?3L TO-247-3LD 340CX 1 260 Tube 450 $28.92
市场订货至交货的时间(周) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Family
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (nC)
Output Capacitance (pF)
Tj Max (°C)
Package Type
NVHL020N090SC1  
 $28.92 
Pb
A
H
P
 Active   
M2
900
118
20
196
296
175
TO-247-3LD
外形
340CX   
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Utilizing Wide Bandgap in HEV/EV Charging Applications
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