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NLAST4051 是采用亚微米硅栅极 CMOS 工艺制造的 MC14051 和 MC74HC4051 的改进版本,可降低 RDS(on)电阻并在低电流下提高线性度。该器件可以使用最高 +/- 3 V 的单电源或双电源供电,以传送 6 VPP 信号而无需耦合电容器。在单电源模式下运行时,仅需将 VEE 的引脚 7 接地。对于双电源运行,VEE 连接到负电压,不得超过最大额定值。器件中提供了转换功能,地址和禁止可兼容标准的 TTL 电平。有关 CMOS 兼容性,请参见 NLAS4051。引脚与所有行业标准版本的“ 4051”兼容。
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ron Max (Ω)
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NLAST4051DR2
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NLAST4051DT
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NLAST4051DTR2
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NLAST4051DTR2G
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NLAST4051QSR
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NLVAST4051DTR2G
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可靠性数据
Die Related Summary Data
Device: NLAST4051DTR2G
Equivalent to wafer fab process: CMOS SUB
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等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
CMOS SUB
2
920154574
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Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)