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6N138M/9M 和 HCPL2730M/31M 光耦合器包括一个与高增益分割达林顿光检测器进行光耦合的 AlGaAs LED。 该分割达林顿配置将输入光电二极管和第一级增益与输出晶体管进行分离,与传统达林顿光电晶体管光耦合器相比,可实现更低的输出饱和电压和更高的运行速度。在双沟道器件 HCPL2730M/HCPL2731M 中,集成的发射极-基极电阻器在温度范围内提供了卓越的稳定性。0.5mA 极低输入电流和 2000% 高电流传输比组合使得此系列特别适用于 MOS、CMOS、LSTTL 和 EIA RS232C 输入接口,同时可确保到 CMOS 的输出兼容性以及较高的扇出 TTL 要求。内部噪声屏蔽提供卓越的 10 kV/µs 共模抑制。
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CTR Tested @IF
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ton (Max) (µs)
toff (Max) (µs)
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TOPR (Min) (°C)
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Reference Price
6N138M
Active
Pb
A
H
P
PDIP-8
NA
0
TUBE
1000
N
0.1
-0.5
7
1
300
-
1.6
0.4
1.5
10
35
10
5000
-40
100
$0.6448
More Details
6N138SDM
Active
Pb
A
H
P
PDIP-8 GW
1
260
REEL
1000
N
0.1
-0.5
7
1
300
-
1.6
0.4
1.5
10
35
10
5000
-40
100
$0.6758
More Details
6N138SM
Active
Pb
A
H
P
PDIP-8 GW
1
260
BLKBG
1000
N
0.1
-0.5
7
1
300
-
1.6
0.4
1.5
10
35
10
5000
-40
100
$0.44
More Details
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可靠性数据
Die Related Summary Data
Device: 6N138M
Equivalent to wafer fab process: BN,GA
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
BN,GA
0
252701301
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)