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H11FXM 系列由一个与对称双向硅光电检测器耦合的砷铝镓红外发光二极管组成。该检测器可与输入进行电气隔离,就好像一个理想隔离的 FET,适用于低电平交流和直流模拟信号的无失真控制。H11FXM 系列器件安装在双线内封装内。
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状态
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
VCC (Max) (V)
VCC (Min) (V)
VOL (Max) (V)
ICCL (Max) (mA)
II (ON) RMS (Min) (mA)
II (OFF) RMS (Max) (mA)
ITH+ (Max) (mA)
ITH- (Max) (mA)
Breakdown Voltage (Min) (V)
Off State Dark Current (Max) (nA)
RON (Max) (Ω)
tPHL, ton (Max) (µs)
tPLH, toff (Max) (µs)
VISO (Min) (V)
TOPR (Min) (°C)
TOPR (Max) (°C)
Reference Price
H11F1M
Active
Pb
A
H
P
PDIP-6
NA
0
BLKBG
1000
Y
30
-
-
-
-
0.05
-
-
30
50
200
25
25
7500
-40
100
$0.4413
More Details
H11F1SM
Active
Pb
A
H
P
PDIP-6
1
260
BLKBG
1000
Y
30
-
-
-
-
0.05
-
-
30
50
200
25
25
7500
-40
100
$0.4413
More Details
H11F1SR2M
Active
Pb
A
H
P
PDIP-6
1
260
BLKBG
1000
Y
30
-
-
-
-
0.05
-
-
30
50
200
25
25
7500
-40
100
$0.4753
More Details
H11F1TVM
Active
Pb
A
H
P
PDIP-6
NA
0
BLKBG
1000
Y
30
-
-
-
-
0.05
-
-
30
50
200
25
25
7500
-40
100
$0.4413
More Details
H11F1VM
Active
Pb
A
H
P
PDIP-6
NA
0
BLKBG
1000
Y
30
-
-
-
-
0.05
-
-
30
50
200
25
25
7500
-40
100
$0.4413
More Details
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可靠性数据
Die Related Summary Data
Device: H11F1M
Equivalent to wafer fab process: BN,GA
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
BN,GA
0
252701301
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)