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The FODM291 series consist of a gallium arsenide infrared emitting diode driving a phototransistor. It built in a compact, half−pitch, mini−flat, 4−pin package. The lead pitch is 1.27 mm.
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CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channels
CTR (Min) (%)
CTR (Max) (%)
CTR tested @ IF (mA)
VCE(sat) (Max) (V)
BVCEO (Min) (V)
BVCBO (Min) (V)
BVECO (Min) (V)
ton (Max) (µs)
toff (Max) (µs)
VISO (Min) (V)
TOPR (Min) (°C)
TOPR (Max) (°C)
Reference Price
FODM291AR2
Active
Pb
A
H
P
MFP4 2.7x4.4, 1.27P
1
260
REEL
5000
F
1
160
600
5
0.2
80
80
7
3
70
3750
-55
110
$0.11
More Details
FODM291BR2
Active
Pb
A
H
P
MFP4 2.7x4.4, 1.27P
1
260
REEL
5000
F
1
160
600
5
0.2
80
80
7
3
70
3750
-55
110
$0.1067
More Details
FODM291CR2
Active
Pb
A
H
P
MFP4 2.7x4.4, 1.27P
1
260
REEL
5000
F
1
160
600
5
0.2
80
80
7
3
70
3750
-55
110
$0.1067
More Details
FODM291DR2
Active
Pb
A
H
P
MFP4 2.7x4.4, 1.27P
1
260
REEL
5000
F
1
160
600
5
0.2
80
80
7
3
70
3750
-55
110
$0.11
More Details
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