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The FODM181 series consist of a gallium arsenide infrared emitting diode driving a phototransistor. It built in a compact, half−pitch, mini−flat, 4−pin package. The lead pitch is 2.54 mm.
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CAD Models
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Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channels
CTR (Min) (%)
CTR (Max) (%)
CTR tested @ IF (mA)
VCE(sat) (Max) (V)
BVCEO (Min) (V)
BVCBO (Min) (V)
BVECO (Min) (V)
ton (Max) (µs)
toff (Max) (µs)
VISO (Min) (V)
TOPR (Min) (°C)
TOPR (Max) (°C)
Reference Price
FODM181A
More Details
FODM181AR2
Active
Pb
A
H
P
MFP4 4.1x4.4, 2.54P
1
260
REEL
3000
F
1
80
600
5
0.2
80
80
7
3
75
3750
-55
110
$0.1733
More Details
FODM181AR2V
More Details
FODM181B
More Details
FODM181BR2
Active
Pb
A
H
P
MFP4 4.1x4.4, 2.54P
1
260
REEL
3000
F
1
80
600
5
0.2
80
80
7
3
75
3750
-55
110
$0.3333
More Details
FODM181C
More Details
FODM181CR2
Active
Pb
A
H
P
MFP4 4.1x4.4, 2.54P
1
260
REEL
3000
F
1
80
600
5
0.2
80
80
7
3
75
3750
-55
110
$0.1733
More Details
FODM181CR2V
More Details
FODM181D
More Details
FODM181DR2
Active
Pb
A
H
P
MFP4 4.1x4.4, 2.54P
1
260
REEL
3000
F
1
80
600
5
0.2
80
80
7
3
75
3750
-55
110
$0.1733
More Details
FODM181DR2V
More Details
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