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Phototransistor Output - DC Sensing Input Optocouplers | FODM181
概览
The FODM181 series consist of a gallium arsenide infrared emitting diode driving a phototransistor. It built in a compact, half−pitch, mini−flat, 4−pin package. The lead pitch is 2.54 mm.
应用
- Primarily Suited for DC−DC Converters
- For Ground Loop Isolation, Signal to Noise Isolation
- Communications – Adapters, Chargers
终端产品
- Consumer – Appliances, Set Top Boxes
- Industrial – Power Supplies, Motor Control, Programmable Logic Control
特性
- Current Transfer Ratio Ranges from 20 to 600%
- At IF = 5 mA, VCE = 5 V, TA = 25°CFODM181A − 80 to 160%FODM181B − 130 to 260%FODM181C − 200 to 400%FODM181D − 300 to 600%
- Safety and Regulatory Approvals:UL1577, 3750 VACRMS for 1 minDIN EN/IEC60747−5−5, 565 V Peak Working Insulation Voltage (Pending)
- Applicable to Infrared Ray Reflow, 260°C
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产品:
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可订购器件:
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产品
FODM181A
More Details
FODM181AR2
Active
Pb
A
H
P
MFP4 4.1x4.4, 2.54P
1
260
REEL
3000
F
1
80
600
5
0.2
80
80
7
3
75
3750
-55
110
$0.1733
More Details
FODM181AR2V
More Details
FODM181B
More Details
FODM181BR2
Active
Pb
A
H
P
MFP4 4.1x4.4, 2.54P
1
260
REEL
3000
F
1
80
600
5
0.2
80
80
7
3
75
3750
-55
110
$0.3333
More Details
FODM181C
More Details
FODM181CR2
Active
Pb
A
H
P
MFP4 4.1x4.4, 2.54P
1
260
REEL
3000
F
1
80
600
5
0.2
80
80
7
3
75
3750
-55
110
$0.1733
More Details
FODM181CR2V
More Details
FODM181D
More Details
FODM181DR2
Active
Pb
A
H
P
MFP4 4.1x4.4, 2.54P
1
260
REEL
3000
F
1
80
600
5
0.2
80
80
7
3
75
3750
-55
110
$0.1733
More Details
FODM181DR2V
More Details
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