Phototransistor Output - DC Sensing Input Optocouplers | H11D1M

6引脚DIP高BVceo光电晶体管输出光电耦合器

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概览

4N38M、H11D1M、H11D3M 和 MOC8204M 都是耦合至光隔离器的光电晶体管类型。 一个砷化镓红外发光二极管与一个高压NPN硅光电二极管耦合。 该器件提供标准塑封6引脚双列直插封装。

  • 消费型设备
  • 工业级电机

  • 高电压：
  • MOC8204M, BVCEO= 400 V
  • H11D1M, BVCEO= 300 V
  • H11D3M, BVCEO= 200 V
  • 安全和法规认证：
  • UL1577，4170 VACRMS（1 分钟）
  • DIN-EN/IEC60747-5-5，850 V 峰值工作绝缘电压

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CTR (Min) (%)

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CTR tested @ IF (mA)

VCE(sat) (Max) (V)

BVCEO (Min) (V)

BVCBO (Min) (V)

BVECO (Min) (V)

ton (Max) (µs)

toff (Max) (µs)

VISO (Min) (V)

TOPR (Min) (°C)

TOPR (Max) (°C)

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H11D1M

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Pb

A

H

P

PDIP-6

646BX

NA

0

BLKBG

1000

N

1

20

-

10

0.4

300

300

7

5

5

4200

-40

100

$0.3024

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H11D1SM

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Pb

A

H

P

PDIP-6

646BY

1

260

BLKBG

1000

N

1

20

-

10

0.4

300

300

7

5

5

4200

-40

100

$0.3219

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H11D1SR2M

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CAD Model

Pb

A

H

P

PDIP-6

646BY

1

260

REEL

1000

N

1

20

-

10

0.4

300

300

7

5

5

4200

-40

100

$0.366

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H11D1SR2VM

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CAD Model

Pb

A

H

P

PDIP-6

646BY

1

260

REEL

1000

N

1

20

-

10

0.4

300

300

7

5

5

4200

-40

100

$0.3467

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H11D1VM

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CAD Model

Pb

A

H

P

PDIP-6

646BX

NA

0

BLKBG

1000

N

1

20

-

10

0.4

300

300

7

5

5

4200

-40

100

$0.3365

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可靠性数据

Die Related Summary Data

Device: H11D1M

Equivalent to wafer fab process: BN,GA

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

BN,GA

0

252701301

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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