Gate Drivers | NCV51752

Automotive 3.75 kVRMS, 4.5-A/9-A Isolated Single Channel Gate Driver with Integrated Negative Bias Control

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The NCV51752 is a family of isolated single-channel gate driver with 4.5-A/9-A source and sink peak current respectively. They are designed for fast switching to drive power MOSFETs and SiC MOSFET power switches. The NCV51752 offers short and matched propagation delays. For improved reliability, dV/dt immunity and even faster
turn−off, the NCV51752 can utilize to generate a negative bias rail. The NCV51752 is available in a 4 mm SOIC-8 package and can support isolation voltage up to 3.75 kVRMS. The NCV51752 offers other important protection function such as independent under-voltage lockout for both-side driver.

  • On-board Chargers
  • xEV DC-DC Converters
  • Traction Inverters
  • Charging Stations

  • xEV SiC/MOSFET applications
  • xEV Motor Drives
  • xEV Isolated Converters in DC-DC and AC-DC Power Supply

  • 4.5-A Peak Source, 9-A Peak Sink Output Current
  • Integrated Negative Bias Control -2/-3/-4/-5-V
  • 36 ns Propagation Delay with 5 ns Max Delay Matching
  • 3-V to 20-V Input Supply Voltage
  • 200V/ns dV/dt Immunity
  • 3.75 kVRMS Isolation for 1 Minute (per UL1577 Requirements)
  • UVLO options 6-V and 8-V for MOSFET, 12-V and 17-V for SiC

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NCV51752CBDR2G

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CAD Model

Pb

A

H

P

SOIC-8

751-07

1

260

REEL

2500

F

SiC MOSFET

1

Single

Galvanic Isolation

1200

33

12

8.3

4.5

9

36

36

5

$1.192

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NCV51752CDDR2G

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Active

CAD Model

Pb

A

H

P

SOIC-8

751-07

1

260

REEL

2500

F

SiC MOSFET

1

Single

Galvanic Isolation

1200

33

12

8.3

4.5

9

36

36

5

$1.3112

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