The FAD3224T family of dual 4 A gate drivers is designed to drive N-channel enhancement-mode MOSFETs in low-side switching applications by providing high peak current pulses during the short switching intervals. Internal circuitry provides an under-voltage lockout function by holding the output LOW until the supply voltage is within the operating range. In addition, the drivers feature matched internal propagation delays between A and B channels for applications requiring dual gate drives with critical timing, such as synchronous rectifiers. This also enables connecting two drivers in parallel to effectively double the current capability driving a single MOSFET. The FAD3224 has dual independent enable pins that default to ON if not connected. If one or both inputs are left unconnected, internal resistors bias the inputs such that the output is pulled LOW to hold the power MOSFET OFF.
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可靠性数据
Die Related Summary Data
Device: FAD3224TUMX-F085
Equivalent to wafer fab process: I4TE
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
I4TE
3
6620906392
More Details
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Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)