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单片高压侧门极驱动器集成电路 FAN73611_OPis 可以驱动最高在 +600V 下运行的 MOSFET 和 IGBT。安森美半导体的高电压工艺和共模干扰抑制技术提供了高压侧驱动器在高 dv/dt 干扰情况下的稳定运行。先进的电平转换电路可针对 VBS = 15V 提供最高 VS = -9.8V(典型值)的高压侧门极驱动器运行。当 VDD 或 VBS 低于指定的阈值电压时,UVLO 电路将防止故障运行。输出驱动器通常会分别源/汲 250mA/500mA,适用于等离子显示面板 (PDP) 应用、电机驱动逆变器和开关模式电源应用。
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FAN73611MX-OP
Pb
A
H
P
SOIC-8
1
260
REEL
3000
N
MOSFET / IGBT
1
High Side
Junction Isolation
625
25
70
30
0.25
0.5
120
120
-
Price N/A
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可靠性数据
Die Related Summary Data
Device: FAN73611MX-OP
Equivalent to wafer fab process: 40
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
40
2
579484595
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Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)