单片半桥门极驱动器集成电路 FAN7382 可以驱动最高在 +600V 下运行的 MOSFET 和 IGBT。安森美半导体的高电压工艺和共模干扰抑制技术提供了高压侧驱动器在高 dv/dt 干扰情况下的稳定运行。先进的电平转换电路可针对 VBS = 15V 允许最高 VS = -9.8 V(典型值)的高压侧门极驱动器运行。输入逻辑电平兼容标准的 TTL 系列逻辑门极。当 VCC 和 VBS 低于指定阈值电压时,用于两种沟道的 UVLO 电路将防止故障运行。输出驱动器通常分别会源/汲 350mA/650mA,适用于荧光灯镇流器、PDP 扫描驱动器、电机控制等。
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FAN7382M1X
Active
Pb
A
H
P
SOIC-14 N
1
260
REEL
3000
Y
MOSFET / IGBT
2
High-Low
Junction Isolation
625
25
60
30
0.35
0.65
170
200
50
$0.7575
More Details
FAN7382MX
Active
Pb
A
H
P
SOIC-8
1
260
REEL
3000
Y
MOSFET / IGBT
2
High-Low
Junction Isolation
625
25
60
30
0.35
0.65
170
200
50
$0.5032
More Details
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可靠性数据
Die Related Summary Data
Device: FAN7382M1X
Equivalent to wafer fab process: 40
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
40
2
579484595
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)