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FAN8811 是一款适用于高电压和高速的高压侧和低压侧门极驱动集成电路,适用于驱动在高达 80 V 的电压下运行的 MOSFET。FAN8811 集成了一个驱动器集成电路和一个自举二极管。该驱动器集成电路具有较低的延迟时间和匹配的 PWM 输入传播延迟,进一步增强了该零部件的性能。该高速双门极驱动器适用于在半桥或同步降压配置中驱动 N 沟道 MOSFET 的高压侧和低压侧。浮动高压侧驱动器能够以高达 80 V 的电源电压运行。在双门极驱动器中,高压侧和低压侧均具有独立的输入,实现了应用中输入控制信号的最大灵活性。PWM 输入信号(高电平)可以为 3.3 V、5 V 或最高 VDD 逻辑输入,覆盖所有可能应用。用于高压侧驱动器偏置电源的自举二极管集成在芯片中。高压侧驱动器引用到开关节点 (HS),通常为高压侧 MOSFET 的源极引脚和低压侧 MOSFET 的漏极引脚。低压侧引用到通常接地的 VSS。包含的功能有输入级、UVLO 保护、移位、自举二极管和输出驱动级。
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FAN8811TMPX
Active
Pb
A
H
P
WDFN-10
1
260
REEL
3000
Y
MOSFET
2
High-Low
Junction Isolation
100
18
6
4
3
6
30
28
10
$1.3223
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可靠性数据
Die Related Summary Data
Device: FAN8811MNTXG
Equivalent to wafer fab process: CMOS SUB
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
CMOS SUB
2
920154574
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Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)