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NCD57000是一款带内部电隔离的高电流单沟道IGBT驱动器,设计用于为高功率应用提供高系统能效和可靠性。功能包括互补输入、漏极开路FAULT和Ready输出、有源米勒钳位、精确UVLO、DESAT保护以及DESAT软关断特性、和独立的高侧和低侧(OUTH和OUTL)驱动器输出,提高系统设计便利性。NCD57000输入侧支持5V和3.3V信号,和驱动器侧的宽偏置电压范围 ,包括负电压功能。NCD57000提供大于5kVrms(UL1577认证)的电隔离和大于1200Viorm(工作电压)能力。可选宽体SOIC-16封装,输入和输出的爬电距离保证为8 毫米,符合强化安全绝缘要求。
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Reference Price
NCD57000DWR2G
Active
Pb
A
H
P
SOIC-16W
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
5.5
24
10
15
7.8
7.1
60
60
20
$3.2254
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可靠性数据
Die Related Summary Data
Device: NCD57000DWR2G
Equivalent to wafer fab process: ONC25
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
ONC25
1
2712519294
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Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)