NCD57001 是一款带内部电流隔离的高电流单沟道 IGBT 驱动器,适用于高功率应用中的高系统能效和可靠性。其功能包括互补输入、开漏故障和就绪输出、有源米勒箝位、准确的 UVLO、DESAT 保护和 DESAT 处的软关断。NCD57001 可适应输入侧上 5V 和 3.3V 信号,以及驱动器侧上的宽偏置电压范围,包括负电压功能。NCD57001 提供 > 5 kVrms(UL1577 等级)电流隔离和 > 1200 Viorm(工作电压)功能。NCD57001 采用宽体 SOIC-16 封装,可在输入和输出之间保证 8 mm 漏电距离,满足加强安全绝缘要求。
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NCD57001DWR2G
Active
Pb
A
H
P
SOIC-16W
1
260
REEL
1000
Y
MOSFET / IGBT
SiC MOSFET
1
Single
Galvanic Isolation
5.5
24
10
15
7.8
7.1
60
60
20
$2.1457
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可靠性数据
Die Related Summary Data
Device: NCD57001DWR2G
Equivalent to wafer fab process: ONC25
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
ONC25
1
2712519294
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Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)