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Gate Drivers | NCD57080
概览
NCD57080A, NCD57080B and NCD57080C are high−current single channel IGBT gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp (NCD57080A), negative power supply (NCD57080B) and separate high and low (OUTH and OUTL) driver outputs (NCD57080C) for system design convenience. NCD57080 (A/B/C) accommodate wide range of input bias voltage and signal levels from 3.3V to 20V. NCD57080 (A/B/C) are available in narrow-body SOIC-8 package.
- UPS
- Motor Control
- Industrial Power Supplies
- HVAC
- Solar Inverters
- Industrial Motor Drives
- Data Center & Server Power Supplies
- Energy Storage and Charging Systems
- High Peak Output Current (+6.5 A/-6.5 A)
- Short Propagation Delays with Accurate Matching
- High Transient & Electromagnetic Immunity
- 3.75 KVrms On-Chip Galvanic Isolation
- Wide Bias Voltage Ranges and Input Voltage Range
- Active Miller Clamp or Negative Gate Voltage or Split Outputs
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NCD57080ADR2G
Active
Pb
A
H
P
SOIC-8
1
260
REEL
2500
Y
IGBT
MOSFET
SiC MOSFET
1
Single
Galvanic Isolation
20
30
10
6
6.5
6.5
60
60
6
$0.92
More Details
NCD57080BDR2G
Active
Pb
A
H
P
SOIC-8
1
260
REEL
2500
Y
IGBT
MOSFET
SiC MOSFET
1
Single
Galvanic Isolation
20
30
10
6
6.5
6.5
60
60
6
$0.92
More Details
NCD57080CDR2G
Active
Pb
A
H
P
SOIC-8
1
260
REEL
2500
Y
IGBT
MOSFET
SiC MOSFET
1
Single
Galvanic Isolation
20
30
10
6
6.5
6.5
60
60
6
$0.92
More Details
NCV57080ADR2G
Active
Pb
A
H
P
SOIC-8
1
260
REEL
2500
Y
IGBT
MOSFET
SiC MOSFET
1
Single
Galvanic Isolation
20
30
10
6
6.5
6.5
60
60
6
$0.92
More Details
NCV57080BDR2G
Active
Pb
A
H
P
SOIC-8
1
260
REEL
2500
Y
IGBT
MOSFET
SiC MOSFET
1
Single
Galvanic Isolation
20
30
10
6
6.5
6.5
60
60
6
$0.92
More Details
NCV57080CDR2G
Active
Pb
A
H
P
SOIC-8
1
260
REEL
2500
Y
IGBT
MOSFET
SiC MOSFET
1
Single
Galvanic Isolation
20
30
10
6
6.5
6.5
60
60
6
$0.92
More Details
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