NCD57090A, NCD57090B, NCD57090C, NCD57090D,NCD57090E and NCD57090F are high−current single channel IGBTgate drivers with 5 kVrms internal galvanic isolation, designed forhigh system efficiency and reliability in high power applications. Thedevices accept complementary inputs and depending on the pinconfiguration, offer options such as Active Miller Clamp(NCD57090A/D/F), negative power supply (NCD57090B) andseparate high and low (OUTH and OUTL) driver outputs(NCD57090C/E) for system design convenience. NCD57090(A/B/C/D/E/F) accommodate wide range of input bias voltage andsignal levels from 3.3 V to 20 V. NCD57090 (A/B/C/D/E/F) areavailable in wide−body SOIC−8 package.
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NCD57090ADWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCD57090BDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCD57090CDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCD57090DDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCD57090EDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCD57090FDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCD57091ADWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCD57091BDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCD57091CDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCV57090ADWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCV57090BDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCV57090CDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCV57090DDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCV57090EDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCV57090FDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCV57091ADWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.495
More Details
NCV57091BDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.495
More Details
NCV57091CDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.495
More Details
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