NCD57200 is a high voltage gate driver with one non−isolated low side gate driver and one galvanic isolated high or low side gate driver. It can directly drive two IGBTs in a half bridge configuration. Isolated high side driver can be powered with an isolated power supply or with Bootstrap technique from the low side power supply. The galvanic isolation for the high side gate driver guarantees reliable switching in high power applications for IGBTs that operate up to 800 V, at high dv/dt. The optimized output stages provide a mean of reducing IGBT losses. Its features include two independent inputs with deadtime and interlock, accurate asymmetric UVLOs, and short and matched propagation delays. The NCD57200 operates with its VCC/VB up to 20 V.
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NCD57200DR2G
Active
Pb
A
H
P
SOIC-8
1
260
REEL
2500
Y
SiC MOSFET
2
Dual
Galvanic Isolation
20
20
13
8
-
-
-
-
-
$0.6325
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