NCD57200 is a high voltage gate driver with one non−isolatedlow side gate driver and one galvanic isolated high or low side gatedriver. It can directly drive two IGBTs in a half bridge configuration.Isolated high side driver can be powered with an isolated power supplyor with Bootstrap technique from the low side power supply. The galvanic isolation for the high side gate driver guaranteesreliable switching in high power applications for IGBTs that operateup to 800 V, at high dv/dt. The optimized output stages provide a meanof reducing IGBT losses. Its features include two independent inputswith deadtime and interlock, accurate asymmetric UVLOs, and shortand matched propagation delays. The NCD57200 operates with itsVCC/VB up to 20 V.
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Case Outline
MSL Type
MSL Temp (°C)
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Container Qty.
ON Target
Power Switch
Number of Outputs
Topology
Isolation Type
Vin Max (V)
VCC Max (V)
Rise Time (ns)
Fall Time (ns)
Drive Source Current Typ (A)
Drive Sink Current Typ (A)
Turn On Prop. Delay Typ (ns)
Turn Off Prop. Delay Typ (ns)
Delay Matching
Reference Price
NCD57201DR2G
Active
Pb
A
H
P
SOIC-8
1
260
REEL
2500
Y
MOSFET
2
Dual
Galvanic Isolation
20
20
13
8
-
-
-
-
-
$0.6325
More Details
NCV57201DR2G
Active
Pb
A
H
P
SOIC-8
1
260
REEL
2500
Y
MOSFET
2
Dual
Galvanic Isolation
20
20
13
8
-
-
-
-
-
$0.6325
More Details
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可靠性数据
Die Related Summary Data
Device: NCD57201DR2G
Equivalent to wafer fab process: ONC25
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
ONC25
1
2712519294
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)