NCP1392B 是一款自振荡高电压 MOSFET 驱动器,主要用于使用半桥拓扑结构的应用。由于其专属高电压技术,该驱动器接受最高 600 V 的大电压。使用一个电阻器,可将该驱动器的运行频率从 25 kHz 调节至 480 kHz。可调节欠电压保护可确保正确的大电压运行范围。内部 100 ms PFC 延迟计时器可保证主要的下游转换器在大电压完全稳定时打开。该器件提供固定死区时间,有助于降低击穿电流。
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Number of Outputs
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Reference Price
NCP1392BDR2G
Active
Pb
A
H
P
SOIC-8
1
260
REEL
2500
N
MOSFET
2
Half-Bridge
Junction Isolation
-
16
40
20
0.5
1
750
750
50
$0.4515
More Details
NCP1392DDR2G
Active
Pb
A
H
P
SOIC-8
1
260
REEL
2500
N
MOSFET
2
Half-Bridge
Junction Isolation
-
16
40
20
0.5
1
450
450
-
$0.4799
More Details
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可靠性数据
Die Related Summary Data
Device: NCP1392BDR2G
Equivalent to wafer fab process: VHVIC
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
VHVIC
2
2577173853
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)