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By Technology
The NCP5104 is a High Voltage Power gate Driver providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs arranged in a half-bridge configuration.
It uses the bootstrap technique to insure a proper drive of the High-side power switch.
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状态
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Power Switch
Number of Outputs
Topology
Isolation Type
Vin Max (V)
VCC Max (V)
Rise Time (ns)
Fall Time (ns)
Drive Source Current Typ (A)
Drive Sink Current Typ (A)
Turn On Prop. Delay Typ (ns)
Turn Off Prop. Delay Typ (ns)
Delay Matching
Reference Price
NCP5104DR2G
Active
Pb
A
H
P
SOIC-8
1
260
REEL
2500
Y
MOSFET / IGBT
2
Half-Bridge
Junction Isolation
600
20
85
35
0.25
0.5
620
100
45
$0.4416
More Details
NCP5104PG
Pb
A
H
P
PDIP-8
NA
0
TUBE
50
N
MOSFET / IGBT
2
Half-Bridge
Junction Isolation
600
20
85
35
0.25
0.5
620
100
45
Price N/A
More Details
NCV5104DR2G
Active
Pb
A
H
P
SOIC-8
1
260
REEL
2500
Y
MOSFET / IGBT
2
Half-Bridge
Junction Isolation
600
20
85
35
0.25
0.5
620
100
45
$0.9028
More Details
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可靠性数据
Die Related Summary Data
Device: NCP5104DR2G
Equivalent to wafer fab process: VHVIC
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
VHVIC
2
2577173853
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)