The NCP51100 2 A gate driver is designed to drive an Nchannel enhancement-mode MOSFET in low-side switching applications by providing high peak current pulses during the short switching intervals. The driver is available with TTL input thresholds. Internal circuitry provides an under-voltage lockout function by holding the output LOW until the supply voltage is within the operating range. The NCP51100 delivers fast MOSFET switching performance, which helps maximize
efficiency in high frequency power converter designs. NCP51100 drivers incorporate MillerDrive™ architecture for the final output stage. This bipolar-MOSFET combination provides high peak current during the Miller plateau stage of the MOSFET turn-on / turn-off process to minimize switching loss, while providing rail-to-rail voltage swing and reverse current capability. The NCP51100 is available in industrystandard, 5-pin, SOT23.
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Die Related Summary Data
Device: NCP51100ASNT1G
Equivalent to wafer fab process: RECT
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
RECT
8
30338862575
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Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)