Gate Drivers | NCP51705

SiC MOSFET下桥驱动器，单个6A高速

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NCP51705驱动器主要设计用于驱动碳化硅MOSFET晶体管，可为碳化硅MOSFET器件提供允许的最大栅极电压，以尽可能降低导通损耗。在开通和关断期间提供高峰值电流也能最大化降低开关损耗。NCP51705利用其板载电荷泵生成用户可选择的负电压轨，从而提升可靠性、抗dV/dt 能力和更快的关断速度。针对隔离应用，NCP51705提供了一个外部可访问的5V电源轨，可为数字/高速光电隔离器的次级侧供电。

  • 高性能逆变器
  • 高功率电机驱动器
  • 图腾柱PFC

  • 工业和电机驱动
  • UPS和光伏逆变器
  • 高功率DC充电器

  • 高峰值输出电流与分流输出级
  • 扩展正电压额定值，最高可达28V
  • 用户可调的内置负电荷泵（-3.3V至-8V）
  • 外部可访问的5V基准/偏置电压轨
  • 可调欠压锁定
  • 快速去饱和功能
  • QFN24 4 x 4 mm 封装

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NCP51705MNTXG

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CAD Model

Pb

A

H

P

WQFN-24

510BE

1

260

REEL

3000

Y

SiC MOSFET

1

Single

Non-Isolated

N/A

28

8

8

6

6

25

25

-

$1.9703

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可靠性数据

Die Related Summary Data

Device: NCP51705MNTXG

Equivalent to wafer fab process: BD

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

BD

0

1595257088

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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