NCP51705驱动器主要设计用于驱动碳化硅MOSFET晶体管,可为碳化硅MOSFET器件提供允许的最大栅极电压,以尽可能降低导通损耗。在开通和关断期间提供高峰值电流也能最大化降低开关损耗。NCP51705利用其板载电荷泵生成用户可选择的负电压轨,从而提升可靠性、抗dV/dt 能力和更快的关断速度。针对隔离应用,NCP51705提供了一个外部可访问的5V电源轨,可为数字/高速光电隔离器的次级侧供电。
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Reference Price
NCP51705MNTXG
Active
Pb
A
H
P
WQFN-24
1
260
REEL
3000
Y
SiC MOSFET
1
Single
Non-Isolated
N/A
28
8
8
6
6
25
25
-
$1.9703
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可靠性数据
Die Related Summary Data
Device: NCP51705MNTXG
Equivalent to wafer fab process: BD
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
BD
0
1595257088
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Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)