MOSFET / IGBT 驱动器,高电压,高压和低压侧,双输入
Last Shipments
NCP5181 是一款高电压功率 Mosfet 驱动器,提供两种输出,用于半桥配置(或任何其他高压侧 + 低压侧配置)的 2 个 N 沟道功率 MOSFET 的直接驱动。它使用自举技术来确保高压侧电源开关的正确驱动。该驱动器使用 2 个独立输入可适应任何拓扑结构(包括半桥、不对称半桥、有源箝位和全桥)。
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Number of Outputs
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Vin Max (V)
VCC Max (V)
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Fall Time (ns)
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Turn Off Prop. Delay Typ (ns)
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Last Shipments
Pb
A
H
P
SOIC-8
1
260
REEL
2500
N
MOSFET
2
High-Low
Junction Isolation
600
20
40
40
1.4
2.2
100
100
35
Price N/A
More Details
Obsolete
Pb
A
H
P
PDIP-8
NA
0
TUBE
50
N
MOSFET
2
High-Low
Junction Isolation
600
20
20
20
1.4
2.2
100
100
35
Price N/A
More Details
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可靠性数据
Die Related Summary Data
Device: NCP5181DR2G
Equivalent to wafer fab process: VHVIC
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
VHVIC
2
2577173853
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Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)