High Side and Low Side Gate Driver, High-Frequency, 180V offering 0.5A source/0.8A capability

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The NCP81080 is a high performance dual mosfet (high side and low side) gate-drive IC designed for driving MOSFETs operating up to 180 V. The NCP81080 integrates a driver IC and a bootstrap diode and offers 0.5A source/0.8A sink driving capability. Anti-cross conduction circuit is integrated to prevent shoot through issues. The high side and low side drivers are independently controlled.This driver is ideally suited for use in high voltage buck and motor control applications.The part is offered in a SO8 and 8 pin 2mm by 2mm DFN package and fully specified from -40C to 140C.

  • Buck converter
  • isolated power supplies
  • Class D audio amplifier
  • Two switch and Active Clamp Forward Converters
  • Motors
  • Drives two N-Channel MOSFETs in High & Low Side
  • Integrated Bootstrap Diode for High Side Gate Drive
  • Bootstrap Supply Voltage Range up to 180V
  • 0.5A Source, 0.8A Sink Output Current Capability
  • Drives 1nF Load with Typical Rise/Fall Times of 19ns/17 ns
  • Wide Supply Voltage Range 5.5V to 20V
  • 2 ns Delay Matching (Typical)
  • Under-Voltage Lockout (UVLO) Protection for Drive Voltage
  • Operating Junction Temperature Range of -40°C to 140°C

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NCP81080MNTBG

Active

Pb

A

H

P

DFN-8

1

260

REEL

3000

Y

MOSFET

2

High-Low

Junction Isolation

180

20

19

17

0.5

0.8

44

30

10

$0.506

More Details

NCP81080DR2G

Active

Pb

A

H

P

SOIC-8

1

260

REEL

2500

Y

MOSFET

2

High-Low

Junction Isolation

180

20

19

17

0.5

0.8

44

30

10

$0.5296

More Details

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