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The NCP81080 is a high performance dual mosfet (high side and low side) gate-drive IC designed for driving MOSFETs operating up to 180 V. The NCP81080 integrates a driver IC and a bootstrap diode and offers 0.5A source/0.8A sink driving capability. Anti-cross conduction circuit is integrated to prevent shoot through issues. The high side and low side drivers are independently controlled.This driver is ideally suited for use in high voltage buck and motor control applications.The part is offered in a SO8 and 8 pin 2mm by 2mm DFN package and fully specified from -40C to 140C.
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Reference Price
NCP81080MNTBG
Active
Pb
A
H
P
DFN-8
1
260
REEL
3000
Y
MOSFET
2
High-Low
Junction Isolation
180
20
19
17
0.5
0.8
44
30
10
$0.506
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可靠性数据
Die Related Summary Data
Device: NCP81080MNTBG
Equivalent to wafer fab process: CMOS SUB
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
CMOS SUB
2
920154574
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Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)