NCV51705驱动器主要设计用于驱动SiC MOSFET晶体管。为了尽可能降低导通损耗,这款驱动器能够向SiC MOSFET器件提供最大允许栅极电压。通过在导通和关断期间提供高峰值电流,开关损耗也降到了最低。为了提高可靠性、抗dV/dt 能力和更快的关断速度,NCV51705能够利用其板载电荷泵产生用户可选的负电压轨。对于隔离式应用,NCV51705还提供一个可从外部接入的5V电源轨,为数字或高速光电隔离器的次级侧供电。
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NCV51705MNTWG
Active
Pb
A
H
P
QFNW-24
1
260
REEL
3000
Y
SiC MOSFET
1
Single
Non-Isolated
-
-
-
-
6
6
25
25
-
$1.7693
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可靠性数据
Die Related Summary Data
Device: NCV51705MNTWG
Equivalent to wafer fab process: ONC18
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
ONC18
2
6465777234
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Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)