Gate Drivers | NCV51705

车用SiC MOSFET驱动器，下桥，单6A高速

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概览

NCV51705驱动器主要设计用于驱动SiC MOSFET晶体管。为了尽可能降低导通损耗，这款驱动器能够向SiC MOSFET器件提供最大允许栅极电压。通过在导通和关断期间提供高峰值电流，开关损耗也降到了最低。为了提高可靠性、抗dV/dt 能力和更快的关断速度，NCV51705能够利用其板载电荷泵产生用户可选的负电压轨。对于隔离式应用，NCV51705还提供一个可从外部接入的5V电源轨，为数字或高速光电隔离器的次级侧供电。

  • High Perfomance Inverters
  • High Power PFC
  • High Power SiC Modules

  • On Board Chargers
  • Traction Inverters
  • High Power DC/DC converters

  • High Peak Output Current with Split Output Stages
  • Extended Positive Voltage Rating up to 28 V Max
  • User−adjustable Built−in Negative Charge Pump (-3.3 V to -8 V)
  • Accessible 5 V Reference / Bias Rail
  • Adjustable Under−Voltage Lockout
  • Fast Desaturation Function
  • QFN24 Package 4 x 4 mm
  • AEC-Qualifiied

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Reference Price

NCV51705MNTWG

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CAD Model

Pb

A

H

P

QFNW-24

484AE

1

260

REEL

3000

Y

SiC MOSFET

1

Single

Non-Isolated

-

-

-

-

6

6

25

25

-

$1.7693

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可靠性数据

Die Related Summary Data

Device: NCV51705MNTWG

Equivalent to wafer fab process: ONC18

产品技术

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

ONC18

2

6465777234

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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