The T30LMPSR131 is a 1 A LDO equipped with NMOS pass transistor and a separate bias supply voltage (VBIAS). The device provides an ultra-low dropout voltage (25mV at 1 A) enables higher efficiency and comes equipped with excellent output voltage accuracy (0.8%). The T30LMPSR131 IQ is optimized to maximize performance in battery operated portable applications. Designed to meet the requirements of RF and analog circuits, the device provides low noise, high PSRR, and excellent load/line transients. The WLCSP6 1.145 mm x 0.75 mm, 0.4 mm pitch Chip Scale package is optimized for use in space constrained applications
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Die Related Summary Data
Device: T30LMPSR131CFCT080T2G
Equivalent to wafer fab process: BCD65
产品技术
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等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
BCD65
1
601539103
More Details
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Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)