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NCP330 是一款低 Ron N 沟道 MOSFET,通过 2 ms 的软启动序列控制,用于移动应用。极低 RDS(on) 使得系统能够在高达 3A 直流下进行供电或电池充电。该器件在电源连接 Vin 引脚(有效高电平)时自动启用,如果无 Vin(内部下拉)则保持关断。
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CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Over Current - Shutdown (Y/N)
Over Current - Current Source (Y/N)
Current Limit (FIXED/ADJ/NO)
Over Voltage Protection (Y/N)
Reverse Current Blocking (Y/N)
FAULT Signal (Y/N)
PGOOD (Y/N)
UVLO (Y/N)
Rds(on) Typ (mΩ)
Max Current (A)
Output Discharge (Y/N)
IMON Output (Y/N)
Adjustable Slew Rate (Y/N)
Vin Min (V)
Vin Max (V)
Iq (µA)
eFuse / Hot Plug (Y/N)
Input / Output
Product Family
Reference Price
NCP330MUTBG
Active
Pb
A
H
P
UDFN-4
1
260
REEL
3000
N
N
N
-
N
N
N
N
N
26
3
N
N
N
1.8
5.5
100
N
1:1
-
$0.2533
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NCV330MUTBG
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可靠性数据
Die Related Summary Data
Device: NCP330MUTBG
Equivalent to wafer fab process: ONC25
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
ONC25
1
2712519294
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)