Protected Power Switches | NCP81295

50A，热插拔控制器，内置MOSFET和IMON功能，可并联，热性能增强型封装

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概览

NCP81295 和 NCP81296 是热插拔控制器，具有低导通电阻MOSFET (0.65 mΩ)。在短路和过电流条件下，这些器件会提供过流保护。低导通电阻可减少损耗，电流由内部电流镜监控，因此无需感应电阻，节省电力及成本。 可并联用于更高电流环境。 强大的安全工作区性能，有助于减少高电流应用中并联器件的数量。NCP81295 具备过电流闩锁， NCP81296 具备hiccup工作模式。 这两款器件都采用热性能增强型 5mm x 5mm QFN 封装。

  • 服务器
  • 存储
  • 基带单元
  • 12V背板

  • 服务器
  • 存储
  • 基站

  • 低至0.65mohms的内部MOSFET
  • 针对短路、过流和软短路的过流保护
  • 模拟IMON
  • 软启动期间的闭环操作
  • 增强型 5mm x 5mm QFN
  • 4.5V至18V工作范围

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Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Over Current - Shutdown (Y/N)

Over Current - Current Source (Y/N)

Current Limit (FIXED/ADJ/NO)

Over Voltage Protection (Y/N)

Reverse Current Blocking (Y/N)

FAULT Signal (Y/N)

PGOOD (Y/N)

UVLO (Y/N)

Rds(on) Typ (mΩ)

Max Current (A)

Output Discharge (Y/N)

IMON Output (Y/N)

Adjustable Slew Rate (Y/N)

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Vin Max (V)

Iq (µA)

eFuse / Hot Plug (Y/N)

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NCP81295MNTXG

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CAD Model

Pb

A

H

P

LQFN-32

487AA

3

260

REEL

2500

Y

Y

N

ADJ

Y

N

Y

Y

Y

0.65

60

Y

Y

Y

4.5

18

3.23

Y

1/1

eFuse

$3.22

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可靠性数据

Die Related Summary Data

Device: NCP81295MNTXG

Equivalent to wafer fab process: ONC25

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

ONC25

1

2712519294

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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