EEPROM Memory | CAT28C65B

64 kb CMOS 并行 EEPROM 内存

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概览

CAT28C65B 是一款快速、低功耗，仅 5.0 V 的 CMOS 并行 EEPROM，组织为 8k x 8 位。它仅需简单的接口即可实现系统内编程。片上地址和数据锁存、带自动清除的自计时写循环，以及 VCC 通电/断电写保护，这些功能消除了附加的计时和保护硬件。数据轮询、RDY/BUSY 引脚和切换状态位发送自计时写循环的开始和结束信号。另外，CAT28C65B 具有硬件和软件写保护特性。CAT28C65B 采用安森美半导体先进的 CMOS 浮动门极工艺制造。它可耐受 100,000 个编程/擦除循环，数据保留期为 100 年。该器件采用 JEDEC 认证的 28 引脚 DIP、28 引脚 TSOP、28 引脚 SOIC 或 32 引脚 PLCC 封装。

  • Automotive Systems
  • Communications Systems
  • Computer Systems
  • Consumer Systems
  • Industrial Systems

  • Fast read access times:
    – 90/120/150ns
  • Low power CMOS dissipation:
    – Active: 25 mA max.
    – Standby: 100 μA max.
  • Simple write operation:
    – On-chip address and data latches
    – Self-timed write cycle with auto-clear
  • Fast write cycle time:
    – 5ms max
  • CMOS and TTL compatible I/O
  • Hardware and software write protection
  • Commercial, industrial and automotive temperature ranges
  • Automatic page write operation:
    – 1 to 32 bytes in 5ms
    – Page load timer
  • End of write detection:
    – Toggle bit
    – DATA polling
    – RDY/BUSY
  • 100,000 program/erase cycles
  • 100 year data retention

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