EEPROM Memory | NV25640LV
概览
NV25640LV 是一款 EEPROM 串行 64-Kb SPI - 汽车级 1 (+125°C) 器件，内部组织为 8kx8 位。它具有 32 字节写入缓冲区，支持串行外围接口 (SPI) 协议。该器件通过芯片选择 (CS) 输入启用。另外，所需总线信号为时钟输入 (SCK)、数据输入 (SI) 和数据输出 (SO) 线路。保持输入可用于暂停与 NV25xxxLV 器件的任何串行通信。该器件具有软件和硬件写保护，包括部分和完整阵列保护。字节级片上 ECC（错误修正代码）使得该器件适用于高可靠性应用。该器件提供了一个附加标识页，可以对其进行永久性写保护。
- Door module
- Body computer & energy management unit
- Immobilizer unit
- Wiper module
- Park assist unit
- Light management unit
- Electronic parking brake
- Engine Start/Stop control unit
- Engine control unit
- ABS/ESP (Electronic Stability Program)
- Airbag
- Electric steering control unit, ESL
- Integrated navigation and infotainment systems
- Automotive Temperatures Grade1: -40°C to +125°C/VCC = 1.7V to 5.5V
- SOIC-8, US-8, TSSOP 8-Lead and Wettable Flank UDFN 8−pad Packages
- 20/ 10 MHz SPI Compatible
- SPI Modes (0,0) & (1,1)
- 32-byte Page Write Buffer
- Self-timed Write Cycle
- Hardware and Software Protection
- Block Write Protection
- Protect ¼, ½ or Entire EEPROM Array - Low Power CMOS Technology
- 200 Year Data Retention
- Additional Identification Page with Permanent Write Protection
- NV Prefix for Automotive and Other Applications Requiring Site andChange Control
- Program/Erase Cycles: 4,000,000 at 25°C; 1,200,000 at +85°C; 600,000 at +125°C;
- These Devices are Pb-Free, Halogen Free/BFR Free, and RoHS Compliant
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NV25640DTVLT3G
Active
Pb
A
H
P
TSSOP-8
1
260
REEL
3000
Y
CMOS
64 kb
8k x 8
SPI
20000
75
1.7
5.5
VCC
10
3
-40
125
4M
Block Write Protection
$0.2444
More Details
NV25640DWVLT3G
Active
Pb
A
H
P
SOIC-8
1
260
REEL
3000
Y
CMOS
64 kb
8k x 8
SPI
20000
75
1.7
5.5
VCC
10
3
-40
125
4M
Block Write Protection
$0.3471
More Details
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