SRAM Memory | N01L6183A

1 Mb，1.8 V 低功耗 SRAM

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N01L6183A 是一款集成式内存器件，包含 1 Mb 静态随机访问内存，组织为 65,536 词，每个词 16 位。此器件采用安森美半导体先进的 CMOS 工艺制造，速度快、功耗超低。该器件使用单芯片启用 (CE) 控制和输出启用 (OE) 运行，可轻松实现内存扩展。字节控制（UB 和 LB）允许独立访问上字节和下字节。N01L6183A 适用于低功耗至关重要的各种应用，如电池备用和手持设备。该器件可基于非常宽的温度范围运行，即 -40°C 至 +85°C，采用兼容其他标准 64 kb x 16 SRAM 的 JEDEC 标准封装。

  • Single wide power supply range - 1.65 to 2.2 V
  • Very low standby current - 0.5 A at 1.8 V (Typical)
  • Very low operating current - 0.7 mA at 1.8 V and 1 s (Typical)
  • Very low page mode operating current - 0.5 mA at 1.8 V and 1 s (Typical)
  • Simple memory control: single chip enable (CE), byte control for independent byte operation, output enable (OE) for memory expansion
  • Low voltage data retention
  • 30 ns OE access time
  • Automatic power down to standby mode
  • TTL compatible three-state output driver
  • Compact space saving BGA package available

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