1 Mb, 3 V Parallel SRAM Memory

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The N01L83W2A is an integrated memory device containing a 1 Mbit Static Random Access Memory organized as 131,072 words by 8 bits. The device is designed and fabricated using advanced CMOS technology from ON Semiconductor to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. The N01L83W2A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40°C to +85°C and is available in JEDEC standard packages compatible with other standard 128 kb x 8 SRAMs.

  • Single wide power supply range - 2.3 to 3.6 V
  • Very low standby current - 2.0 µA at 3.0 V (Typical)
  • Very low operating current - 2.0 mA at 3.0 V and 1 µs (Typical)
  • Very low page mode operating current - 0.8 mA at 3.0 V and 1 µs (Typical)
  • Simple memory control: Dual chip enable (CE1 and CE2), output enable (OE) for memory expansion
  • Low voltage data retention
  • 30 ns OE access time
  • Automatic power down to standby mode
  • TTL compatible three-state output driver

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