SRAM Memory | N04L63W2A

4 Mb，3 V 并行 SRAM 存储器

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N04L63W2A 是一款集成式内存器件，包含一个 4 Mb 的静态随机访问内存，按 16 位排列 262,144 个字。此器件采用安森美半导体先进的 CMOS 工艺制造，速度快、功耗低。此器件可与两个芯片启用（CE1 和 CE2）控制和输出启用 (OE) 一起运行，以便轻松扩展内存。字节控制（UB 和 LB）支持独立访问高位和低位字节，也可以用来取消选择该器件。N04L63W2A 适合低功耗至关重要的各种应用，如备用电池和手持设备。此器件可在 −40°C 至 +85°C 的宽广温度范围内运行，采用 JEDEC 标准封装，与其他标准 256 kb x 16 SRAM 兼容。

  • Single wide power supply range - 2.3 to 3.6 V
  • Very low standby current - 4.0 µA at 3.0 V (Typical)
  • Very low operating current - 2.0 mA at 3.0 V and 1 µs (Typical)
  • Very low page mode operating current - 0.8 mA at 3.0 V and 1 µs (Typical)
  • Simple memory control: Dual chip enable (CE1 and CE2), output enable (OE) for memory expansion
  • Low voltage data retention
  • 25 ns OE access time
  • Automatic power down to standby mode
  • TTL compatible three-state output driver
  • Compact space saving BGA package available

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