SRAM Memory | N64S830HA

串行 SRAM 内存，64-kb，3.0 V

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安森美半导体串行 SRAM 系列包括多款集成存储器件，其中就包括这款 64 K 串行访问的静态随机访问存储器，内部组织为 8 K 个词，每个词 8 位。此类器件采用安森美半导体先进的 CMOS 工艺制造，速度快、功耗低。此类器件通过一个单芯片选择 (CS) 输入运行，并使用一个简单的串行外围接口 (SPI) 串行总线。单个数据输入和数据输出行与时钟一起用于访问器件中的数据。N64S830HA 器件包括暂停引脚，可实现与要暂停器件的通信。暂停后，输入转换将忽略。此类器件可在 −40°C 至 +85°C 的宽广温度范围内运行，采用若干标准封装。

  • 2.7 to 3.6 V power supply range
  • Very low standby current - as low as 1 uA
  • Very low operating current - as low as 3 mA
  • Flexible operating modes: word read and write, page mode (32 word page), and burst mode (full array)
  • 8 K x 8 bit organization
  • Simple memory control: single chip select (CS), serial input (SI) and serial output (SO)
  • Self timed write cycles
  • Built-in write protection (CS high)
  • HOLD pin for pausing communication
  • High reliability - unlimited write cycles
  • RoHS Compliant Packages - Green SOIC and TSSOP

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N64S830HAS22I

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Active

CAD Model

Pb

A

H

P

SOIC-8

751AZ

3

260

TUBE

100

Y

Serial

64 kb

8k x 8

20

2.7

3.6

1

$1.0491

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N64S830HAT22I

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Obsolete

CAD Model

Pb

A

H

P

TSSOP-8

948S-01

3

260

TUBE

100

N

Serial

64 kb

8k x 8

20

2.7

3.6

1

Price N/A

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可靠性数据

Die Related Summary Data

Device: N64S830HAS22I

Equivalent to wafer fab process: ONC18

产品技术

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

ONC18

2

6465777234

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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