MC14049B 六路逆变器/缓冲器和 MC14050B 非反相六路缓冲器采用一个单片结构,使用 MOS P 沟道和 N 沟道增强型器件进行构造。这些互补 MOS 器件主要用途是需要低功耗和/或高抗扰度的场合。这些器件仅使用一个电源电压 VDD 即可提供逻辑电平转换。输入信号高电平 (VIH) 可能超过逻辑电平转换的 VDD 电源电压。当器件用作 CMOS - TTL/DTL 转换器(VDD = 5.0 V,VOL <= 0.4 V,IOL >= 3.2 mA)时,可以驱动两个 TTL/DTL 负载。请注意,引脚 13 和 16 不能内部联接这些器件;后续联接这些端子不会影响电路运行。
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MC14049BDG
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MC14049BDR2G
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NLV14049BDR2G
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可靠性数据
Die Related Summary Data
Device: MC14049BDG
Equivalent to wafer fab process: CMOS STD
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等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
CMOS STD
3
3597164517
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Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)