四路总线缓冲器,3 态

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MC74VHC125 是一宽高速 CMOS 四路总线缓冲器,采用硅门极 CMOS 工艺制造。它能实现与同等双极肖特基 TTL 相似的高速运行,同时还能保持 CMOS 低功耗。MC74VHC125 需要 3 态控制输入 (OEbar) 设置为高电平才能将输出置于高阻抗状态。该内部电路由三级组成,包括一个提供高抗扰性和稳定输出的缓冲输出。输入耐压达 7V,支持 5V 系统到 3V 系统的接口。

  • High Speed: tPD = 3.8ns (Typ) at VCC = 5V
  • Low Power Dissipation: ICC = 4mA (Max) at TA = 25°C
  • High Noise Immunity: VNIH = VNIL = 28% VCC
  • Power Down Protection Provided on Inputs
  • Balanced Propagation Delays
  • Designed for 2V to 5.5V Operating Range
  • Low Noise: VOLP = 0.8V (Max)
  • Pin and Function Compatible with Other Standard Logic Families
  • Latchup Performance Exceeds 300mA
  • ESD Performance: HBM > 2000V; Machine Model > 200V
  • Chip Complexity: 72 FETs or 18 Equivalent Gates
  • These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.

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MC74VHC125DG

Active

CAD Model

Pb

A

H

P

SOIC-14

1

260

TUBE

55

N

4

3-State

2

5.5

7.5

8

$0.2639

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MC74VHC125DR2G

Active

CAD Model

Pb

A

H

P

SOIC-14

1

260

REEL

2500

N

4

3-State

2

5.5

7.5

8

$0.1303

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MC74VHC125DTR2G

Active

CAD Model

Pb

A

H

P

TSSOP-14 WB

1

260

REEL

2500

N

4

3-State

2

5.5

7.5

8

$0.1452

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