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MC74VHC1GT126 是一款单门极非反向 3 态缓冲器,使用硅门极 CMOS 技术制造。它能实现与同等双极肖特基 TTL 相似的高速运行,同时还能保持 CMOS 低功耗。MC74VHC1GT126 需要 3 态控制输入 (OE(bar)) 设置为低电平才能将输出置于高阻抗状态。该器件输入可兼容 TTL 型输入阈值,输出则具有全 CMOS 电平输出摆幅。此器件上的输入保护电路允许输入上的耐过电压,使得此器件能够用作从 3.0V CMOS 逻辑到 5.0V CMOS 逻辑,或 1.8V CMOS 逻辑到 3.0V CMOS 逻辑的逻辑电平转换器,且能在高电压电源下运行。MC74VHC1GT126 输入结构在应用高达 5.5V 的电压时提供保护,而无论电源电压如何。因此使得 MC74VHC1GT126 可用作 5V 到 3V 电路的接口。输出结构还会在 VCC = 0V 时提供保护。这些输入和输出结构有助于防止电源电压 - 输入/输出电压不匹配、电池备用、热插入等导致的器件损坏。
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VCC Min (V)
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tpd Max (ns)
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MC74VHC1GT126DBVT1G
Active
Pb
A
H
P
SC-74A-5 3.00x1.50x0.95, 0.95P
1
260
REEL
3000
N
1
3-State
2
5.5
7.5
8
$0.0272
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MC74VHC1GT126DBVT1G-Q
Active
Pb
A
H
P
SC-74A-5 3.00x1.50x0.95, 0.95P
1
260
REEL
3000
F
1
3-State
2
5.5
7.5
8
$0.0244
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MC74VHC1GT126DFT1G
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MC74VHC1GT126DFT1G-Q
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MC74VHC1GT126DFT2G
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MC74VHC1GT126DFT2G-Q
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Obsolete
Pb
A
H
P
SC-74A-5 3.00x1.50x0.95, 0.95P
1
260
REEL
3000
F
1
3-State
2
5.5
7.5
8
Price N/A
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MC74VHC1GT126MU3TCG
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MC74VHC1GT126P5T5G
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可靠性数据
Die Related Summary Data
Device: M74VHC1GT126DF1G
Equivalent to wafer fab process: ONC18
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
ONC18
2
6465777234
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Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)