VHC595 是一种先进的高速 CMOS 移位寄存器多谐振荡器,采用硅门极 CMOS 工艺制造。它能实现与同等双极肖特基 TTL 相似的高速运行,同时还能保持 CMOS 低功耗。该器件包含一个 8 位串行输入并行输出移位寄存器,馈送 8 位 D 型存储寄存器。该存储寄存器具有八个 3 态输出。为移位寄存器和存储寄存器均提供单独的时钟。移位寄存器具有一个直接超控的清除串行输入,以及用于级联的多个串行输出(标准)引脚。移位寄存器和存储寄存器均使用正边触发时钟。如果两个时钟互相联接,移位寄存器状态则总是比存储寄存器提前一个时钟脉冲。输入保护电路可确保对输入引脚应用 0V 到 7V 电压而无需考虑电源电压。此器件可用于将 5V 系统与 3V 系统以及两种电源系统的接口,如备用电池。此电路可防止器件由于不匹配的供电和输入电压而损坏。
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74VHC595MTCX
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Die Related Summary Data
Device: 74VHC595M
Equivalent to wafer fab process: CMOS STD
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平均故障间隔时间/平均无故障时间(按小时计算)
FITS
CMOS STD
3
3597164517
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Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)