双 4 位静态移位寄存器

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MC14015B 双 4 位静态移位寄存器在单片结构中使用 MOS P 沟道和 N 沟道增强模式器件构造。它由两个相同的独立 4 状态串行输入/并行输出寄存器组成。每个寄存器都有独立的时钟和重置输入,以及单个串行数据输入。寄存器状态为 D 型主从触发器。在正向时钟转换期间,数据从一级转移到下一级。在重置线上施加高电平时,可清除每个寄存器。这些互补 MOS 移位寄存器主要用于需要低功耗和/或抗扰度的缓冲器存储和串并转换。

  • Diode Protection on All Inputs
  • Supply Voltage Range = 3.0 Vdc to 18 Vdc
  • Logic Edge-Clocked Flip-Flop Design - Logic state is retained indefinitely with clock level either high or low; information is transferred to the output only on the positive goingedge of the clock pulse.
  • Capable of Driving Two Low-power TTL Loads or One Low-power Schottky TTL Load Over the Rated Temperature Range.
  • Pb-Free Packages are Available*

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MC14015BDG

Active

CAD Model

Pb

A

H

P

SOIC-16

1

260

TUBE

48

N

Shift Register

2

3

18

250

2.25

$0.2561

More Details

MC14015BDR2G

Active

CAD Model

Pb

A

H

P

SOIC-16

1

260

REEL

2500

N

Shift Register

2

3

18

250

2.25

$0.2561

More Details

NLV14015BDR2G

Active

CAD Model

Pb

A

H

P

SOIC-16

1

260

REEL

2500

N

Shift Register

2

3

18

250

2.25

$0.2385

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