FDMC8030

双 N 沟道，Power Trench® MOSFET，40V，12A，10mΩ

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CAD模型

概览

此器件在一个双 Power 33 (3 mm X 3 mm MLP) 封装中包括了两个 40V N 沟道 MOSFET。该封装针对卓越热性能进行了改善。

应用

服务器

特性

V_GS= 10 V，I_D = 12 A时，最大r_DS(on) = 10mΩ
V_GS= 4.5 V，I_D = 10 A时，最大r_DS(on) = 14mΩ
V_GS= 3.2 V，I_D = 4 A时，最大r_DS(on) = 28mΩ
终端无引线且符合RoHS标准

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDMC8030

Lifetime

WDFN-8

511DG

260

REEL

3000

Q1=Q2=10

N-Channel

Dual

±20

2.8

Q1=Q2=14

1462

$0.4721

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MOSFETs | FDMC8030

双 N 沟道，Power Trench® MOSFET，40V，12A，10mΩ

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