能源基础设施

Our SiC MOSFETs are designed to be fast and rugged and include system benefits from high efficiency to reduced system size and cost. MOSFETs are metal–oxide–semiconductor field-effect transistors with insulated gates. These silicon carbide MOSFETs have a higher blocking voltage and higher thermal conductivity than silicon MOSFETs, despite having similar design elements. SiC power devices also have a lower state resistance and 10 times the breakdown strength of regular silicon. In general, Systems with SiC MOSFETs have better performance and increased efficiency when compared to MOSFETs made with silicon material.

There are many advantages to choosing SiC MOSFETs over silicon MOSFETs, such as higher switching frequencies. High-temperature development is also not a concern when using SiC MOSFET modules because these devices can operate efficiently even in high heat. Additionally, with SiC MOSFETs, you benefit from a more compact product size because all components (inductors, filters, etc.) are smaller.

SiC Modules contain SiC MOSFETs and SiC diodes. The boost modules are used in the DC-DC stages of solar inverters. These modules use SiC MOSFETs and SiC diodes with voltage ratings of 1200V.

A Silicon Carbide (SiC) Module is a power module that operates with Silicon Carbide semiconductors for its switch. The purpose of a SiC power module is the transformation of electrical power through switches to improve system efficiency.

The primary function of SiC Modules is to transform electrical power. Silicon Carbide offers an advantage over silicon because, with less resistance to move away from the source (due to increased efficiency), SiC devices can operate at a higher switching frequency. A SiC based system is also more compact and lightweight than a silicon solution, allowing for smaller designs. Therefore, SiC devices are the ideal solution for situations where you want to increase efficiency and improve your thermal management.

Our Silicon Carbide diodes use a completely new technology that provides superior switching performance and higher reliability to silicon.

Many people have been using silicon diodes in their machinery, but there is a new option for those looking for better efficiency. SiC diodes are diodes that allow for higher switching performance. They have greater power density and overall increased efficiency. Their reduced energy loss also helps to lower system costs.

Compared to silicon diodes, silicon carbide diodes are more efficient and resistant to high temperatures. They work at high frequencies and higher voltages. Since SiC diodes have faster recovery times than silicon diodes, they're ideal for any kind of current that requires a quick transition from blocking to conducting stages. They also don't get as hot as silicon, allowing them to be used in higher-temperature applications with more efficiency.