数据中心
Intelligent Data Center Solutions for AI Computing
The rapid growth of Artificial Intelligence (AI) and cloud / edge computing is driving unprecedented data center expansion. With electricity costs as the largest operational expense, power conversion efficiency is critical for sustainability and cost reduction.
概览
The growth of Artificial Intelligence (AI) has fueled data center expansion and the need for efficiency. Electricity is the biggest cost, making power conversion efficiency crucial. The demand for AI data center, cloud and edge computing, and connectivity requires higher rack power density and adapting to 800V HVDC architecture for megawatt AI infrastructure.
onsemi delivers intelligent power solutions spanning from the electrical grid to the GPU, enabling high‑density, energy‑efficient rack server architectures. By integrating EliteSiC™ MOSFETs and JFETs, PowerTrench® T10 MOSFETs, Gallium Nitride (GaN) HEMTs, point‑of‑load (PoL) buck regulators, smart fuses, and Vcore power solutions, system designers can achieve higher power density, improved efficiency, and precise power management across the entire server power chain.
These advanced power technologies help optimize energy consumption, reduce operational and cooling costs, and support the performance, reliability, and sustainability requirements of modern data center and AI server platforms.
onsemi Solutions Powering Next Gen AI Data Centers
Learn how onsemi’s intelligent technologies enable high-efficiency, high-density power conversion for next-generation AI data centers.
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SiC Cascode JFETs Power AI and Industrial Systems
CJFETs combine SiC performance with simple gate‑drive integration to boost PSU efficiency, cut BOM cost, and enable smaller, lighter designs for AI servers and industrial systems.
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Power AI Data Centers with EliteSiC M3S and T10 MOSFETs
Learn how 650V EliteSiC M3S and PowerTrench® T10 MOSFETs deliver high power density and efficiency for AI data centers.
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Smart Fuse Layout Guidelines
The Application Note focuses on describing best layout practices for designs utilizing NCP81428 and NCP81418.
Application Note
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产品
Silicon Carbide (SiC) Cascode JFETs
Our high-performance SiC cascode JFETs deliver best-in-class switching speed, lower switching losses, and higher efficiency. They provide high switching frequency and deliver ultra-low on-resistance (RDS (on)) starting at just 5mohm, utilizing less than half the die size of any other technology. Available in both standard thru-hole (including Kelvin) and surface mount packages, they offer excellent cost-effectiveness.
These devices utilize a unique cascode configuration, integrating a high-performance SiC fast JFET with a cascode-optimized Si-MOSFET. This innovative approach enables standard gate drive (0-12V) for SiC devices. Given their smaller die size and compatibility with existing driver solutions, the SiC cascode JFETs offer optimized system performance and cost structure.
Silicon Carbide (SiC) MOSFETs
Our SiC MOSFETs are designed to be fast and rugged and include system benefits from high efficiency to reduced system size and cost. MOSFETs are metal–oxide–semiconductor field-effect transistors with insulated gates. These silicon carbide MOSFETs have a higher blocking voltage and higher thermal conductivity than silicon MOSFETs, despite having similar design elements. SiC power devices also have a lower state resistance and 10 times the breakdown strength of regular silicon. In general, Systems with SiC MOSFETs have better performance and increased efficiency when compared to MOSFETs made with silicon material.
There are many advantages to choosing SiC MOSFETs over silicon MOSFETs, such as higher switching frequencies. High-temperature development is also not a concern when using SiC MOSFET modules because these devices can operate efficiently even in high heat. Additionally, with SiC MOSFETs, you benefit from a more compact product size because all components (inductors, filters, etc.) are smaller.
Silicon Carbide (SiC) JFETs
Our SiC JFETs are high-performance, normally-on JFET transistors with VDS-max ranging from 650V to 1700V. They provide high switching frequency and deliver ultra-low on-resistance (RDS (on)) starting at just 4 mohm, utilizing less than half the die size of any other technology. Additionally low gate charge (Qg) enables further reductions in both conduction and switching losses.
SiC JFETs are optimized for one of the uses in Power Supply Units (PSUs) and downstream high-voltage DC-DC conversion to handle the enormous power requirements of future AI Data Center Racks. In addition, they improve efficiency and safety by replacing multiple components with a solid-state switch based on SiC JFETs in EV battery disconnect units. Furthermore, they enable certain Energy Storage topologies and Solid-State Circuit Breakers (SSCBs).
Silicon Carbide (SiC) Combo JFETs
SiC combo-FETs represent a revolutionary advancement, combining our low RDS(on) SiC JFET with a Si MOSFET in a single, compact package. Specifically designed for low-frequency protection applications, such as Power Supply Units (PSUs), downstream high-voltage DC-DC converters for AI Data Center Racks, Solid-State Circuit Breakers (SSCBs), EV battery disconnects, and surge protection, these combo-FETs allow users to access the JFET gate for optimized design. The integration of the Si MOSFET ensures a normally-off solution, achieving a size reduction exceeding 25% compared to discrete implementations.
Low/Medium Voltage MOSFETs
Portfolio of comprehensive range of Low-medium voltage power Mosfets that delivers superior performance and reliability for switching applications. Our cutting-edge PowerTrench® T10 technology delivers industry leading RDS, higher power density, reduced switching losses and better thermal performance.
Gate Drivers
GaN, IGBT, FET, MOSFET, H-Bridge MOSFET, and SiC MOSFET inverting and non-inverting drivers ideal for switching applications.
Converters
NCP3286
40A Stackable Synchronous Buck Regulator with PMBUS Interface
Protected Power Switches
NCP81428
Hot Swap Smart Fuse, 18 V, 0.65 mΩ, 50 A, LQFN32
Controllers
FD5012MNTXG
Dual-Rail, 12-Phase Digital Controller with PMBus
Controllers
FD5001MNTXG
VR13/14 Digital Multiphase Controller with PMBus
Integrated Driver & MOSFET
FDMF5085
Smart Power Stage (SPS) Modules with Integrated Current and Temperature Monitors
Documents
Tutorial
Introducing Vertical GaN Tutorial
Tutorial
Advancing Power Circuits: SiC JFETs in Solid-State Circuit Breakers
Application Notes
EliteSiC JFET Based High Voltage Hot‐Swap Application
Application Notes
Choosing the Correct Semiconductor Technology for 800 V
White Papers
AI 数据中心和电信应用的电源技术对比
Application Notes
Cascode Primer Operation of the SiC Cascode JFET
Tutorial
“为 EliteSiC 匹配栅极驱动器”教程
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