November 7-9, 2022

Sonesta Redondo Beach & Marina, California

The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.

Keynote Session

Speaking Engagement Title: Toward Vertical Integration to Scale the Supply of High Performance SiC Power Modules for Demanding Applications

Date: November 8, 2022

Time: 8:45 AM – 9:15 AM PST

Abstract: The adoption of SiC Schottky diodes and then SiC MOSFETs in solar inverter applications was the first wave to evaluate the capabilities of these new devices in challenging applications and environments. With the observed and projected growth of demand for high-efficiency, high-voltage power semiconductor devices in automotive traction and EV chargers, challenges arise to supply SiC devices into these demanding applications. Current and emerging SiC power device manufacturers are developing strategies to be able to support the accelerating need for SiC power device supply. onsemi is building on its strength in end-to-end solutions of silicon power semiconductor devices, starting with silicon crystal growth and epitaxy, through die fabrication and final package and module assembly. onsemi has extended its existing silicon-based power semi portfolio into SiC-based power modules. To achieve this, we continue to invest heavily in SiC wafer and epitaxy, as well as expanding wafer fab capacity to meet the growing demand. Additionally, onsemi continues to develop advanced SiC power modules to meet the specific needs of automotive and industrial customers. At onsemi, we strongly believe that this vertically-integrated strategy will help meet the growing customer needs for high-efficiency SiC power modules.

About the Presenter


Dr. Kevin Matocha

Job Title:

Senior Director, Design for Reliability and Manufacturability, onsemi


Kevin’s career has focused on the development of wide bandgap devices, including GaN and SiC devices, with particular emphasis on SiC MOSFET performance and reliability. His professional career began at GE Global Research in 2000, where he developed SiC harsh environment sensors, including UV sensors and gas sensors. From 2008-2011, he led GE’s effort to develop SiC power MOSFETs, including enhancing the performance and improving gate oxide reliability. In 2011, Kevin joined SemiSouth as VP of Product Engineering, leading efforts to scale to production SiC Schottky diodes and SiC JFETs. In 2012, Kevin co-founded Monolith Semiconductor Inc. (Round Rock, TX), which included developing the first domestic foundry for 150mm SiC power device fabrication. Monolith Semi released commercial SiC MOSFETs and diodes in 2016. Kevin served as President and CTO of Monolith Semiconductor until 2018, when the company was acquired by Littelfuse, Inc. (Chicago, IL). Kevin received his PhD degree in 2003 from Rensselaer Polytechnic Institute (Troy, NY), focused on the development of lateral GaN power MOSFETs. Kevin has been awarded 42 US patents and has delivered 95 technical publications in technical journals and conferences, including several invited talks.

Tutorial Session

Speaking Engagement Title: Evolution of SiC substrate production understanding and managing defects in SiC

Date: November 7, 2022

Time: 2:40 PM – 4:00 PM PST

About the Presenter


Raghavan Parthasarathy

Job Title:

Corporate Tech Ladder-Fellow (TL), onsemi