半导体功率论坛 Semiconductor Power Forum

Silicon Carbide (SiC) – From challenging material to robust Reliability

Silicon Carbide (SiC) can be considered as one of the most promising semiconductor materials to manufacture high power electronic devices. Thanks to its excellent physical properties, it is widespread used in new and upcoming power system designs. While onsemi made great use of knowledge and methodologies acquired for many years on Si technologies, the specific challenges introduced by the SiC material have been and still are extensively assessed in order to tailor an appropriate qualification methodology and demonstrate robust Reliability. The talk will guide you through the onsemi qualification methodology and some of these SiC specific challenges, showing how they have been addressed and modeled.