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此系列数字晶体管用于替代一个器件及其外部电阻偏置网络。该偏置电阻晶体管 (BRT) 包含一个晶体管和一个由两个电阻组成的单片偏置网络;一个串联基极电阻和一个基极发射电阻。该 BRT 将这些组件集成到了一个器件中,因此不再需要这些外部组件。使用 BRT 可以同时降低系统成本和板空间。
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状态
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Polarity
IC Continuous (A)
V(BR)CEO Min (V)
hFE Min
R1 (kΩ)
R2 (kΩ)
R1/R2 Typ
Vi(off) Max (V)
Vi(on) Min (V)
Reference Price
DTC114EET1G
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SDTC114EET1G
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可靠性数据
Die Related Summary Data
Device: DTC114EET1G
Equivalent to wafer fab process: SST
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
SST
0
4654891639
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Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)