
onsemi’s vertical Gallium Nitride (vGaN) technology is a breakthrough power semiconductor technology that delivers record efficiency, power density, and ruggedness for the age of AI and electrification.
Developed and manufactured at the onsemi’s fab in Syracuse, NY, this next-generation “GaN-on-GaN” design moves current vertically through the chip instead of along the surface to enable far greater performance in a smaller, double-sided cooled package.
Discover our most valuable vGaN resources handpicked to help you design smarter, faster, and with greater confidence.
The novel next-generation GaN-on-GaN power semiconductors conduct current vertically, delivering record power density and efficiency, making it ideal for AI data centers, electric vehicles (EVs), renewable energy, and aerospace, defense and security.
Up to 1,200 Volts and Beyond.
Reduced energy loss and heat, increasing efficiency by up to 50%.
Reduced end-system size and weight.
66,000 square-foot facility in Syracuse, NY. Proprietary processes grow GaN layers directly on GaN substrates.
Double-sided cooled package.
vGaN enables switching frequencies much higher than traditional solutions.
Vertical GaN
Increased power density for 800V DC-DC converters and reduced component counts to greatly improve cost per rack.
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Vertical GaN
Smaller, lighter and more efficient inverters for increased EV range.
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Vertical GaN
Higher voltage handling and reduced energy losses for solar inverters. Fast, efficient, high-density power for energy storage systems.
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Vertical GaN
Higher performance, enhanced ruggedness, and more compact designs.
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